Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

Q. X. Jia; P. Arendt; J. R. Groves; Y. Fan; J. M. Roper; S. R. Foltyn

doi:10.1557/JMR.1998.0344

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO₂ on SiO₂/Si

Q. X. Jia
, P. Arendt
, J. R. Groves
, Y. Fan
, J. M. Roper
, S. R. Foltyn

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Highly conductive biaxially textured RuO₂ thin films were deposited on technically important SiO₂/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO₂ on SiO₂/Si. The biaxially oriented RuO₂ had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba_0.5Sr_0.5TiO₃ thin films on RuO₂/IBAD-YSZ/SiO₂/Si. The Ba_0.5Sr_0.5TiO₃ had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

Original language	English
Pages (from-to)	2461-2464
Number of pages	4
Journal	Journal of Materials Research
Volume	13
Issue number	9
DOIs	https://doi.org/10.1557/JMR.1998.0344
State	Published - Sep 1998

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title = "Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si",

abstract = "Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.",

author = "Jia, \{Q. X.\} and P. Arendt and Groves, \{J. R.\} and Y. Fan and Roper, \{J. M.\} and Foltyn, \{S. R.\}",

year = "1998",

month = sep,

doi = "10.1557/JMR.1998.0344",

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T1 - Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

AU - Jia, Q. X.

AU - Arendt, P.

AU - Groves, J. R.

AU - Fan, Y.

AU - Roper, J. M.

AU - Foltyn, S. R.

PY - 1998/9

Y1 - 1998/9

N2 - Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

AB - Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

UR - https://www.scopus.com/pages/publications/0032162578

U2 - 10.1557/JMR.1998.0344

DO - 10.1557/JMR.1998.0344

M3 - Article

AN - SCOPUS:0032162578

SN - 0884-2914

VL - 13

SP - 2461

EP - 2464

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 9

ER -

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO₂ on SiO₂/Si

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