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Role of the interface on the magnetoelectric properties of BaTiO 3 thin films deposited on polycrystalline Ni foils

  • Weizheng Liang
  • , Zheng Li
  • , Zhenxing Bi
  • , Tianxiang Nan
  • , Hui Du
  • , Cewen Nan
  • , Chonglin Chen
  • , Quanxi Jia
  • , Yuan Lin
  • University of Electronic Science and Technology of China
  • Tsinghua University
  • Los Alamos National Laboratory
  • University of Texas at San Antonio
  • University of Houston

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

BaTiO3 (BTO) thin films were deposited on polycrystalline Ni foils using a chemical solution approach. We show that the interface between the BTO film and the Ni foil plays a critical role in determining the magnetoelectric (ME) properties of this flexible assembly, which is likely to be related to the evolution of nickel oxide at the interface during the growth of BTO films. Our results have demonstrated that not only a well-controlled interface between the BTO film and the Ni substrate can be achieved, but also an ME voltage coefficient as large as 90 mV cm-1 Oe-1 can be accomplished.

Original languageEnglish
Pages (from-to)708-714
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number4
DOIs
StatePublished - Jan 28 2014

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