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Role of the interface on radiation damage in the SrTiO3/ LaAlO3 heterostructure under Ne2+ ion irradiation

  • Zhenxing Bi
  • , Blas P. Uberuaga
  • , L. J. Vernon
  • , Jeffery A. Aguiar
  • , Engang Fu
  • , Shijian Zheng
  • , Shixiong Zhang
  • , Yongqiang Wang
  • , Amit Misra
  • , Quanxi Jia
  • Los Alamos National Laboratory
  • IBM
  • Los Alamos National Laboratory Materials Science and Technology Division
  • Peking University
  • Indiana University Bloomington

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We systematically investigated the microstructural evolution of heteroepitaxial SrTiO3 (STO) thin films grown on a single crystal LaAlO3 (LAO) (001) substrate, focusing on the response of the STO/LAO interface to Ne2+ irradiation at room temperature. Cross sectional transmission electron microscope (TEM) analysis reveals that the LAO crystal amorphizes first after a relatively low dose of damage followed by the amorphization of the STO film after irradiation to a higher dose. While the critical dose to amorphize differs between each material, amorphization begins at the interface and proceeds outward in both cases. Thus, a crystalline/amorphous interface first forms at the STO/LAO interface by a dose of 1 dpa, and then an amorphous/amorphous interface forms when the dose reaches 3 dpa. Scanning TEM and x-ray energy dispersive spectroscopy indicate no significant heavy cation elemental diffusion, though electron energy loss spectroscopy reveals a redistribution of oxygen across the film/substrate interface after Ne2+ irradiation. Atomistic calculations are used to interpret the experimental findings in terms of the defect properties in each of the two component phases.

Original languageEnglish
Article number124315
JournalJournal of Applied Physics
Volume115
Issue number12
DOIs
StatePublished - Mar 28 2014

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