Abstract
High-temperature superconducting YBa2Cu3O 7-x (YBCO) thin films were deposited on GaAs substrates by laser ablation. A double-buffer layer of yttrium-stabilized ZrO2 (YSZ)/Si3N4 was used to nucleate YBCO but also to prevent the degradation of the GaAs during YBCO film deposition. Superconducting YBCO thin films with a highly c-axis orientation perpendicular to the substrate surface, zero-resistance temperature of 85.5 K, and critical current density of 1.9×103 and 1.3×104 A/cm2 at 77 and 50 K, respectively, have been achieved in our experiments. These values are believed to be the best results reported so far for YBCO on GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 1120-1122 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 59 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1991 |
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