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Ring oscillator based sub-1V leaky integrate-and-fire neuron circuit

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

19 Scopus citations

Abstract

In this paper, a ring-oscillator (RO) based sub-1V leaky integrate-and-fire (I and F) neuron circuit is proposed, that can support user programmable refractory period and spike-frequency adaptation. Designed in CMOS 65-nm TSMC process, the neuron can operate from 0.9 V and has the unique feature that the same circuit can be programmed to operate either at biological time-scales or at accelerated time-scales. As ring-oscillators in nanometer CMOS are small compared to capacitors used in existing I and F silicon neuron (SiN), a large number of RO-based neurons can be integrated along with complex digital circuits to realize a single-chip Neuromorphic-SoC.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems
Subtitle of host publicationFrom Dreams to Innovation, ISCAS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467368520
DOIs
StatePublished - Sep 25 2017
Event50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, United States
Duration: May 28 2017May 31 2017

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Country/TerritoryUnited States
CityBaltimore
Period05/28/1705/31/17

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