RF performance and avalanche breakdown analysis of InN tunnel FETs

Krishnendu Ghosh; Uttam Singisetti

doi:10.1109/TED.2014.2344914

RF performance and avalanche breakdown analysis of InN tunnel FETs

Krishnendu Ghosh
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

This paper reports radio frequency (RF) performance and channel breakdown analysis in an n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling. We investigate the RF performance of the device. High transconductance of 2.18 mS/μm and current gain cutoff frequency of 460 GHz makes the device suitable for terahertz applications. A significant reduction in gate-to-drain capacitance is observed under a relatively higher drain bias (V_ds=1 V). Impact ionization coefficient in the channel is evaluated quantitatively considering semiclassical carrier transport and avalanche breakdown is found to be unlikely at (V_ds= 1.0 V.

Original language	English
Article number	6878469
Pages (from-to)	3405-3410
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	10
DOIs	https://doi.org/10.1109/TED.2014.2344914
State	Published - Oct 1 2014

Keywords

Avalanche mechanism
gate-to-drain capacitance
high power terahertz application
InN
ionization coefficient
tunnel field-effect transistor (TFET)
Wolff's theory.

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10.1109/TED.2014.2344914

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title = "RF performance and avalanche breakdown analysis of InN tunnel FETs",

abstract = "This paper reports radio frequency (RF) performance and channel breakdown analysis in an n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling. We investigate the RF performance of the device. High transconductance of 2.18 mS/μm and current gain cutoff frequency of 460 GHz makes the device suitable for terahertz applications. A significant reduction in gate-to-drain capacitance is observed under a relatively higher drain bias (Vds=1 V). Impact ionization coefficient in the channel is evaluated quantitatively considering semiclassical carrier transport and avalanche breakdown is found to be unlikely at (Vds= 1.0 V.",

keywords = "Avalanche mechanism, gate-to-drain capacitance, high power terahertz application, InN, ionization coefficient, tunnel field-effect transistor (TFET), Wolff's theory.",

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AB - This paper reports radio frequency (RF) performance and channel breakdown analysis in an n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling. We investigate the RF performance of the device. High transconductance of 2.18 mS/μm and current gain cutoff frequency of 460 GHz makes the device suitable for terahertz applications. A significant reduction in gate-to-drain capacitance is observed under a relatively higher drain bias (Vds=1 V). Impact ionization coefficient in the channel is evaluated quantitatively considering semiclassical carrier transport and avalanche breakdown is found to be unlikely at (Vds= 1.0 V.

KW - Avalanche mechanism

KW - gate-to-drain capacitance

KW - high power terahertz application

KW - InN

KW - ionization coefficient

KW - tunnel field-effect transistor (TFET)

KW - Wolff's theory.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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RF performance and avalanche breakdown analysis of InN tunnel FETs

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