RF characterization of gigahertz flexible silicon thin-film transistor on plastic substrates under bending conditions

Guoxuan Qin; Jung Hun Seo; Yang Zhang; Han Zhou; Weidong Zhou; Yuxin Wang; Jianguo Ma; Zhenqiang Ma

doi:10.1109/LED.2012.2231853

RF characterization of gigahertz flexible silicon thin-film transistor on plastic substrates under bending conditions

Guoxuan Qin
, Jung Hun Seo
, Yang Zhang
, Han Zhou
, Weidong Zhou
, Yuxin Wang
, Jianguo Ma
, Zhenqiang Ma

Department of Materials Design and Innovation

Tianjin University
University of Wisconsin-Madison
University of Texas at Arlington
Masterwork Machinery Company, Ltd.

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

This letter presents fabrication of a flexible 1.5-μm-channel-length silicon thin-film transistor (TFT) on a plastic substrate with a cutoff frequency f_T of ∼ 3.7 GHz and a maximum oscillation frequency f_\max of ∼12 GHz. Radio-frequency (RF) characterization is conducted for the flexible TFT under uniaxial mechanical bending conditions, indicating slight but notable monotonic performance enhancement with larger bending strains. Equivalent circuit model and theoretical analysis are employed to understand the underlying mechanism. Flexible gigahertz TFTs are shown to be naturally suitable for high-performance RF/microwave applications under mechanical bending (deformation) environment. This letter provides insight on designing and employing flexible gigahertz active devices.

Original language	English
Article number	6407731
Pages (from-to)	262-264
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2231853
State	Published - 2013

Keywords

Bending strain
flexible electronics
modeling
silicon nanomembrane (SiNM)
thin-film transistor (TFT)

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10.1109/LED.2012.2231853

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title = "RF characterization of gigahertz flexible silicon thin-film transistor on plastic substrates under bending conditions",

abstract = "This letter presents fabrication of a flexible 1.5-μm-channel-length silicon thin-film transistor (TFT) on a plastic substrate with a cutoff frequency fT of ∼ 3.7 GHz and a maximum oscillation frequency f\textbackslash{}max of ∼12 GHz. Radio-frequency (RF) characterization is conducted for the flexible TFT under uniaxial mechanical bending conditions, indicating slight but notable monotonic performance enhancement with larger bending strains. Equivalent circuit model and theoretical analysis are employed to understand the underlying mechanism. Flexible gigahertz TFTs are shown to be naturally suitable for high-performance RF/microwave applications under mechanical bending (deformation) environment. This letter provides insight on designing and employing flexible gigahertz active devices.",

keywords = "Bending strain, flexible electronics, modeling, silicon nanomembrane (SiNM), thin-film transistor (TFT)",

author = "Guoxuan Qin and Seo, \{Jung Hun\} and Yang Zhang and Han Zhou and Weidong Zhou and Yuxin Wang and Jianguo Ma and Zhenqiang Ma",

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AU - Qin, Guoxuan

AU - Seo, Jung Hun

AU - Zhang, Yang

AU - Zhou, Han

AU - Zhou, Weidong

AU - Wang, Yuxin

AU - Ma, Jianguo

AU - Ma, Zhenqiang

PY - 2013

Y1 - 2013

N2 - This letter presents fabrication of a flexible 1.5-μm-channel-length silicon thin-film transistor (TFT) on a plastic substrate with a cutoff frequency fT of ∼ 3.7 GHz and a maximum oscillation frequency f\max of ∼12 GHz. Radio-frequency (RF) characterization is conducted for the flexible TFT under uniaxial mechanical bending conditions, indicating slight but notable monotonic performance enhancement with larger bending strains. Equivalent circuit model and theoretical analysis are employed to understand the underlying mechanism. Flexible gigahertz TFTs are shown to be naturally suitable for high-performance RF/microwave applications under mechanical bending (deformation) environment. This letter provides insight on designing and employing flexible gigahertz active devices.

AB - This letter presents fabrication of a flexible 1.5-μm-channel-length silicon thin-film transistor (TFT) on a plastic substrate with a cutoff frequency fT of ∼ 3.7 GHz and a maximum oscillation frequency f\max of ∼12 GHz. Radio-frequency (RF) characterization is conducted for the flexible TFT under uniaxial mechanical bending conditions, indicating slight but notable monotonic performance enhancement with larger bending strains. Equivalent circuit model and theoretical analysis are employed to understand the underlying mechanism. Flexible gigahertz TFTs are shown to be naturally suitable for high-performance RF/microwave applications under mechanical bending (deformation) environment. This letter provides insight on designing and employing flexible gigahertz active devices.

KW - Bending strain

KW - flexible electronics

KW - modeling

KW - silicon nanomembrane (SiNM)

KW - thin-film transistor (TFT)

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DO - 10.1109/LED.2012.2231853

M3 - Article

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SN - 0741-3106

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SP - 262

EP - 264

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

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ER -

RF characterization of gigahertz flexible silicon thin-film transistor on plastic substrates under bending conditions

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