@inproceedings{147a849444f2428facc76e26eadde570,
title = "Reverse Recovery and Rectification Characteristic of β-Ga2O3Schottky Barrier Diode",
abstract = "A gallium oxide (β-Ga2 O3) Schottky barrier diode (SBD) is proposed and characterized. The fabricated diode has an area of 300 μm × 300 μm with a 12 μm unintentionally-doped (UID) (1.7 × 1016 cm-3) Ga2 O3 epitaxial layer on Sn doped (5.4 × 1018 cm-3) (010) Ga2 O3 substrate. The device has 1.02 kV breakdown voltage and 500 mA forward current at 5.5 V. The reverse recovery characteristic and the rectification capability of the diode are experimentally studied. The Ga2 O3 SBD shows a high potential for power device application such as pulse power application.",
author = "Inhwan Lee and Sudipto Saha and Uttam Singisetti and Xiu Yao",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 ; Conference date: 07-11-2021 Through 11-11-2021",
year = "2021",
doi = "10.1109/WiPDA49284.2021.9645087",
language = "English",
series = "2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "58--61",
booktitle = "2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings",
address = "United States",
}