Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

Y. J. Wang; H. A. Nickel; B. D. McCombe; F. M. Peeters; J. M. Shi; G. Q. Hai; X. G. Wu; T. J. Eustis; W. Schaff

doi:10.1016/S1386-9477(98)00035-6

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

Y. J. Wang
, H. A. Nickel
, B. D. McCombe
, F. M. Peeters
, J. M. Shi
, G. Q. Hai
, X. G. Wu
, T. J. Eustis
, W. Schaff

Physics

National High Magnetic Field Laboratory
SUNY Buffalo
University of Antwerp
Universidade Federal de São Carlos
CAS - Institute of Semiconductors
Cornell University

Research output: Contribution to journal › Article › peer-review

Abstract

A detailed experimental study of electron cycloton resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al_0.3Ga_0.7As multiple quantum well sampels in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all sampels near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has ben calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.

Original language	English
Pages (from-to)	161-165
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00035-6
State	Published - Jul 15 1998

Keywords

Electron-optical-phonon interaction
GaAs/AlGaAs quantum well structures
Interface phonons
Resonant magnetopolaron effects

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10.1016/S1386-9477(98)00035-6

Cite this

@article{2120906a49f643889698de7cdd4af04e,

title = "Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures",

abstract = "A detailed experimental study of electron cycloton resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well sampels in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all sampels near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has ben calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.",

keywords = "Electron-optical-phonon interaction, GaAs/AlGaAs quantum well structures, Interface phonons, Resonant magnetopolaron effects",

author = "Wang, \{Y. J.\} and Nickel, \{H. A.\} and McCombe, \{B. D.\} and Peeters, \{F. M.\} and Shi, \{J. M.\} and Hai, \{G. Q.\} and Wu, \{X. G.\} and Eustis, \{T. J.\} and W. Schaff",

year = "1998",

month = jul,

day = "15",

doi = "10.1016/S1386-9477(98)00035-6",

language = "English",

volume = "2",

pages = "161--165",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

AU - Wang, Y. J.

AU - Nickel, H. A.

AU - McCombe, B. D.

AU - Peeters, F. M.

AU - Shi, J. M.

AU - Hai, G. Q.

AU - Wu, X. G.

AU - Eustis, T. J.

AU - Schaff, W.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - A detailed experimental study of electron cycloton resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well sampels in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all sampels near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has ben calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.

AB - A detailed experimental study of electron cycloton resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well sampels in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all sampels near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has ben calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.

KW - Electron-optical-phonon interaction

KW - GaAs/AlGaAs quantum well structures

KW - Interface phonons

KW - Resonant magnetopolaron effects

UR - https://www.scopus.com/pages/publications/0347569891

U2 - 10.1016/S1386-9477(98)00035-6

DO - 10.1016/S1386-9477(98)00035-6

M3 - Article

AN - SCOPUS:0347569891

SN - 1386-9477

VL - 2

SP - 161

EP - 165

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

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