Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Y. J. Wang; H. A. Nickel; D. B. McCombe; F. M. Peeters; J. M. Shi; G. Q. Hai; X. G. Wu; T. J. Eustis; W. Schaff

doi:10.1103/PhysRevLett.79.3226

Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Y. J. Wang
, H. A. Nickel
, D. B. McCombe
, F. M. Peeters
, J. M. Shi
, G. Q. Hai
, X. G. Wu
, T. J. Eustis
, W. Schaff

Physics

National High Magnetic Field Laboratory
SUNY Buffalo
University of Antwerp
Universidade Federal de São Carlos
CAS - Institute of Semiconductors
Cornell University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al_0.3Ga_0.7 As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

Original language	English
Pages (from-to)	3226-3229
Number of pages	4
Journal	Physical Review Letters
Volume	79
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.79.3226
State	Published - 1997

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10.1103/PhysRevLett.79.3226

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title = "Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures",

abstract = "Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7 As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.",

author = "Wang, \{Y. J.\} and Nickel, \{H. A.\} and McCombe, \{D. B.\} and Peeters, \{F. M.\} and Shi, \{J. M.\} and Hai, \{G. Q.\} and Wu, \{X. G.\} and Eustis, \{T. J.\} and W. Schaff",

year = "1997",

doi = "10.1103/PhysRevLett.79.3226",

language = "English",

volume = "79",

pages = "3226--3229",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "17",

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TY - JOUR

T1 - Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

AU - Wang, Y. J.

AU - Nickel, H. A.

AU - McCombe, D. B.

AU - Peeters, F. M.

AU - Shi, J. M.

AU - Hai, G. Q.

AU - Wu, X. G.

AU - Eustis, T. J.

AU - Schaff, W.

PY - 1997

Y1 - 1997

N2 - Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7 As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

AB - Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7 As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

UR - https://www.scopus.com/pages/publications/4243420485

U2 - 10.1103/PhysRevLett.79.3226

DO - 10.1103/PhysRevLett.79.3226

M3 - Article

AN - SCOPUS:4243420485

SN - 0031-9007

VL - 79

SP - 3226

EP - 3229

JO - Physical Review Letters

JF - Physical Review Letters

IS - 17

ER -

Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

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