Resonant generation of terahertz optical sidebands from confined magnetoexcitons

J. Kono; M. Y. Su; J. Černe; M. S. Sherwin; S. J. Allen; T. Inoshita; T. Noda; H. Sakaki

doi:10.1016/S0168-583X(98)00301-2

Resonant generation of terahertz optical sidebands from confined magnetoexcitons

J. Kono
, M. Y. Su
, J. Černe
, M. S. Sherwin
, S. J. Allen
, T. Inoshita
, T. Noda
, H. Sakaki

Physics

Japan Science and Technology Agency
University of California at Santa Barbara
Stanford University
The University of Tokyo

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ω_NIR ± 2nω_THz, where ω_NIR is the interband exciton-creation frequency, ω_THz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ω_THz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.

Original language	English
Pages (from-to)	115-122
Number of pages	8
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	144
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00301-2
State	Published - Sep 2 1998

Keywords

Confined excitons
Free-electron lasers
Optical sidebands
Terahertz dynamics

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10.1016/S0168-583X(98)00301-2

Cite this

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title = "Resonant generation of terahertz optical sidebands from confined magnetoexcitons",

abstract = "We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ωNIR ± 2nωTHz, where ωNIR is the interband exciton-creation frequency, ωTHz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ωTHz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.",

keywords = "Confined excitons, Free-electron lasers, Optical sidebands, Terahertz dynamics",

author = "J. Kono and Su, \{M. Y.\} and J. {\v C}erne and Sherwin, \{M. S.\} and Allen, \{S. J.\} and T. Inoshita and T. Noda and H. Sakaki",

year = "1998",

month = sep,

day = "2",

doi = "10.1016/S0168-583X(98)00301-2",

language = "English",

volume = "144",

pages = "115--122",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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number = "1-4",

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TY - JOUR

T1 - Resonant generation of terahertz optical sidebands from confined magnetoexcitons

AU - Kono, J.

AU - Su, M. Y.

AU - Černe, J.

AU - Sherwin, M. S.

AU - Allen, S. J.

AU - Inoshita, T.

AU - Noda, T.

AU - Sakaki, H.

PY - 1998/9/2

Y1 - 1998/9/2

N2 - We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ωNIR ± 2nωTHz, where ωNIR is the interband exciton-creation frequency, ωTHz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ωTHz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.

AB - We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one- and two-photon internal transitions with intense terahertz electric fields. Strong near-bandgap emission lines, or optical sidebands, appear at frequencies ωNIR ± 2nωTHz, where ωNIR is the interband exciton-creation frequency, ωTHz is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when ωTHz coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.

KW - Confined excitons

KW - Free-electron lasers

KW - Optical sidebands

KW - Terahertz dynamics

UR - https://www.scopus.com/pages/publications/0032475355

U2 - 10.1016/S0168-583X(98)00301-2

DO - 10.1016/S0168-583X(98)00301-2

M3 - Article

AN - SCOPUS:0032475355

SN - 0168-583X

VL - 144

SP - 115

EP - 122

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Resonant generation of terahertz optical sidebands from confined magnetoexcitons

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Keywords

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