Abstract
In this paper, the authors report resonant cavity (RC) metal-semiconductor-metal (MSM) germanium nanomembrane (Ge NM) photodetectors via transfer printing. The dislocation-free Ge NM layer was transferred onto an ultrathin Si NM/SiO2 distributed Bragg reflector. As a result, a low dark current density of 1 × 10-9 A/μm2 and a quantum efficiency of 17.3% at 1.55 μm, which is twice larger than the quantum efficiency without a bottom mirror, were measured from the transferred RC MSM Ge photodetector. The enhancement of the quantum efficiency is verified by simulation.
| Original language | English |
|---|---|
| Article number | 040604 |
| Journal | Journal of Vacuum Science and Technology B |
| Volume | 34 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 1 2016 |
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