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Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

  • V. I. Kadushkin
  • , Yu G. Sadof'ev
  • , J. P. Bird
  • , S. R. Johnson
  • , Y. H. Zhang
  • Ryazan State University named for S. A. Yesenin
  • Arizona State University

Research output: Contribution to journalArticlepeer-review

Abstract

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

Original languageEnglish
Pages (from-to)327-334
Number of pages8
JournalSemiconductors
Volume41
Issue number3
DOIs
StatePublished - Mar 2007

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