Reply to "comment on 'current transport in Pd/n-InP diodes formed at room and low temperature'" [J. Appl. Phys. 72, 3803 (1992)]

W. A. Anderson; H. J. Lee

doi:10.1063/1.353915

Reply to "comment on 'current transport in Pd/n-InP diodes formed at room and low temperature'" [J. Appl. Phys. 72, 3803 (1992)]

W. A. Anderson
, H. J. Lee

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

Abstract

A further analysis of our previous data [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1993)] suggests conduction by thermionic field emission at low voltage for Au or Pd/n-InP Schottky diodes fabricated by cryogenic processing or low temperature (LT). Data at higher voltages follow the thermionic emission mechanism as described by R. T. Tung, J. Appl. Phys. 73, 4064 (1993). We do not feel that the inhomogeneity model of Tung should be applied to the LT diode due to the nature of thin film formation for metals deposited at low temperature.

Original language	English
Pages (from-to)	7994
Number of pages	1
Journal	Journal of Applied Physics
Volume	73
Issue number	11
DOIs	https://doi.org/10.1063/1.353915
State	Published - 1993

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title = "Reply to {"}comment on 'current transport in Pd/n-InP diodes formed at room and low temperature'{"} [J. Appl. Phys. 72, 3803 (1992)]",

abstract = "A further analysis of our previous data [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1993)] suggests conduction by thermionic field emission at low voltage for Au or Pd/n-InP Schottky diodes fabricated by cryogenic processing or low temperature (LT). Data at higher voltages follow the thermionic emission mechanism as described by R. T. Tung, J. Appl. Phys. 73, 4064 (1993). We do not feel that the inhomogeneity model of Tung should be applied to the LT diode due to the nature of thin film formation for metals deposited at low temperature.",

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T1 - Reply to "comment on 'current transport in Pd/n-InP diodes formed at room and low temperature'" [J. Appl. Phys. 72, 3803 (1992)]

AU - Anderson, W. A.

AU - Lee, H. J.

PY - 1993

Y1 - 1993

N2 - A further analysis of our previous data [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1993)] suggests conduction by thermionic field emission at low voltage for Au or Pd/n-InP Schottky diodes fabricated by cryogenic processing or low temperature (LT). Data at higher voltages follow the thermionic emission mechanism as described by R. T. Tung, J. Appl. Phys. 73, 4064 (1993). We do not feel that the inhomogeneity model of Tung should be applied to the LT diode due to the nature of thin film formation for metals deposited at low temperature.

AB - A further analysis of our previous data [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1993)] suggests conduction by thermionic field emission at low voltage for Au or Pd/n-InP Schottky diodes fabricated by cryogenic processing or low temperature (LT). Data at higher voltages follow the thermionic emission mechanism as described by R. T. Tung, J. Appl. Phys. 73, 4064 (1993). We do not feel that the inhomogeneity model of Tung should be applied to the LT diode due to the nature of thin film formation for metals deposited at low temperature.

UR - https://www.scopus.com/pages/publications/36449005863

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JF - Journal of Applied Physics

IS - 11

ER -

Reply to "comment on 'current transport in Pd/n-InP diodes formed at room and low temperature'" [J. Appl. Phys. 72, 3803 (1992)]

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