Relaxation times in InAs/AlSb quantum wells

A. G. Markelz; N. G. Asmar; E. G. Gwinn; B. Brar

doi:10.1063/1.121377

Relaxation times in InAs/AlSb quantum wells

A. G. Markelz
, N. G. Asmar
, E. G. Gwinn
, B. Brar

Physics

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields.

Original language	English
Pages (from-to)	2439-2441
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	19
DOIs	https://doi.org/10.1063/1.121377
State	Published - 1998

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10.1063/1.121377

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title = "Relaxation times in InAs/AlSb quantum wells",

abstract = "We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields.",

author = "Markelz, \{A. G.\} and Asmar, \{N. G.\} and Gwinn, \{E. G.\} and B. Brar",

year = "1998",

doi = "10.1063/1.121377",

language = "English",

volume = "72",

pages = "2439--2441",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Relaxation times in InAs/AlSb quantum wells

AU - Markelz, A. G.

AU - Asmar, N. G.

AU - Gwinn, E. G.

AU - Brar, B.

PY - 1998

Y1 - 1998

N2 - We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields.

AB - We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields.

UR - https://www.scopus.com/pages/publications/3242797533

U2 - 10.1063/1.121377

DO - 10.1063/1.121377

M3 - Article

AN - SCOPUS:3242797533

SN - 0003-6951

VL - 72

SP - 2439

EP - 2441

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Relaxation times in InAs/AlSb quantum wells

Abstract

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