Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes

R. M. Stroud; A. T. Hanbicki; Y. D. Park; G. Kioseoglou; A. G. Petukhov; B. T. Jonker; G. Itskos; A. Petrou

doi:10.1103/PhysRevLett.89.166602

Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes

R. M. Stroud
, A. T. Hanbicki
, Y. D. Park
, G. Kioseoglou
, A. G. Petukhov
, B. T. Jonker
, G. Itskos
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

The effects of the interface microstructure on spin-injection efficiency in Zn_1-xMn_xSe/Al_yGa_1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization correlates inversely with the density of linear defects resulting from stacking faults at the ZnMnSe/AlGaAs interface.

Original language	English
Article number	166602
Pages (from-to)	166602/1-166602/4
Journal	Physical Review Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.89.166602
State	Published - Oct 14 2002

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Stroud, R. M., Hanbicki, A. T., Park, Y. D., Kioseoglou, G., Petukhov, A. G., Jonker, B. T., Itskos, G., & Petrou, A. (2002). Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes. Physical Review Letters, 89(16), 166602/1-166602/4. Article 166602. https://doi.org/10.1103/PhysRevLett.89.166602

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abstract = "The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization correlates inversely with the density of linear defects resulting from stacking faults at the ZnMnSe/AlGaAs interface.",

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AU - Hanbicki, A. T.

AU - Park, Y. D.

AU - Kioseoglou, G.

AU - Petukhov, A. G.

AU - Jonker, B. T.

AU - Itskos, G.

AU - Petrou, A.

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AB - The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization correlates inversely with the density of linear defects resulting from stacking faults at the ZnMnSe/AlGaAs interface.

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ER -

Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes

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