Rectifying current-voltage characteristics of BiFeO3 Nb -doped SrTiO3 heterojunction

H. Yang; H. M. Luo; H. Wang; I. O. Usov; N. A. Suvorova; M. Jain; D. M. Feldmann; P. C. Dowden; R. F. DePaula; Q. X. Jia

doi:10.1063/1.2896302

Rectifying current-voltage characteristics of BiFeO₃ Nb -doped SrTiO₃ heterojunction

H. Yang
, H. M. Luo
, H. Wang
, I. O. Usov
, N. A. Suvorova
, M. Jain
, D. M. Feldmann
, P. C. Dowden
, R. F. DePaula
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory
Texas A&M University

Research output: Contribution to journal › Article › peer-review

187 Scopus citations

Abstract

Epitaxial c -axis oriented BiFe O3 (BFO) thin films were deposited on (001) Nb-doped SrTi O3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p -type semiconductor and formed a p-n heterojunction with an n -type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5× 104. Reverse C-V characteristics exhibited a linear 1 C2 versus V plot, from which a built-in potential of 0.6 V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

Original language	English
Article number	102113
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2896302
State	Published - 2008

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@article{318117f3edde4a10af36dc2f5ba9d515,

title = "Rectifying current-voltage characteristics of BiFeO3 Nb -doped SrTiO3 heterojunction",

abstract = "Epitaxial c -axis oriented BiFe O3 (BFO) thin films were deposited on (001) Nb-doped SrTi O3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p -type semiconductor and formed a p-n heterojunction with an n -type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5{\texttimes} 104. Reverse C-V characteristics exhibited a linear 1 C2 versus V plot, from which a built-in potential of 0.6 V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.",

author = "H. Yang and Luo, \{H. M.\} and H. Wang and Usov, \{I. O.\} and Suvorova, \{N. A.\} and M. Jain and Feldmann, \{D. M.\} and Dowden, \{P. C.\} and DePaula, \{R. F.\} and Jia, \{Q. X.\}",

year = "2008",

doi = "10.1063/1.2896302",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Rectifying current-voltage characteristics of BiFeO3 Nb -doped SrTiO3 heterojunction

AU - Yang, H.

AU - Luo, H. M.

AU - Wang, H.

AU - Usov, I. O.

AU - Suvorova, N. A.

AU - Jain, M.

AU - Feldmann, D. M.

AU - Dowden, P. C.

AU - DePaula, R. F.

AU - Jia, Q. X.

PY - 2008

Y1 - 2008

N2 - Epitaxial c -axis oriented BiFe O3 (BFO) thin films were deposited on (001) Nb-doped SrTi O3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p -type semiconductor and formed a p-n heterojunction with an n -type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5× 104. Reverse C-V characteristics exhibited a linear 1 C2 versus V plot, from which a built-in potential of 0.6 V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

AB - Epitaxial c -axis oriented BiFe O3 (BFO) thin films were deposited on (001) Nb-doped SrTi O3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p -type semiconductor and formed a p-n heterojunction with an n -type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5× 104. Reverse C-V characteristics exhibited a linear 1 C2 versus V plot, from which a built-in potential of 0.6 V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

UR - https://www.scopus.com/pages/publications/40849113431

U2 - 10.1063/1.2896302

DO - 10.1063/1.2896302

M3 - Article

AN - SCOPUS:40849113431

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102113

ER -

Rectifying current-voltage characteristics of BiFeO₃ Nb -doped SrTiO₃ heterojunction

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