@inproceedings{968a7248a10a4dd8acc33c9badfc4aad,
title = "Record high current density and low contact resistance in MoS2 FETs by ion doping",
abstract = "Record high current density of 300 μA/μm with low contact resistance of 200 Ω μm and a channel length of 0.8 μm at a drain-source bias of 1.6 V has been achieved for the first time in MoS2 field-effect transistors (FETs) grown by chemical vapor transport. The low contact resistance is achieved using a polyethylene-oxide cesium-perchlorate solid polymer ion conductor formed by drop casting. The charged ions are placed into position over the channel by the application of a bias to a side gate and then locked into place by lowering the temperature. A weak temperature dependence of the drain current after ion doping indicates that transport in the Schottky contacts is dominated by tunneling.",
author = "Sara Fathipour and Li, \{Hua Min\} and Maja Remskar and Lingyen Yeh and Wilman Tsai and Yuming Lin and Susan Fullerton-Shirey and Alan Seabaugh",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 ; Conference date: 25-04-2016 Through 27-04-2016",
year = "2016",
month = may,
day = "27",
doi = "10.1109/VLSI-TSA.2016.7480511",
language = "English",
series = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",
address = "United States",
}