Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

I. P. Marko; A. R. Adams; S. J. Sweeney; I. R. Sellers; D. J. Mowbray; M. S. Skolnick; H. Y. Liu; K. M. Groom

Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

I. P. Marko
, A. R. Adams
, S. J. Sweeney
, I. R. Sellers
, D. J. Mowbray
, M. S. Skolnick
, H. Y. Liu
, K. M. Groom

Department of Electrical Engineering

University of Surrey
University of Sheffield

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A quantititive investigation of the different recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers was discussed. It was observed that in quantum dot lasers with very low threshold current density the temperature sensitivity of the threshold current arose from nonradiative recombinations. It was also observed that the emission from the wetting layer in the spontaneous emission spectra at threshold at 300k although its amount was very small. It was found that the lasing line was very narrow in all the temperature range demonstrating the high homogeneity of the dots.

Original language	English
Pages (from-to)	57-58
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 2004
Event	Conference Digest - 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan Duration: Sep 21 2004 → Sep 25 2004

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@article{30951264d9ca4b759a91969569f0859f,

title = "Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers",

abstract = "A quantititive investigation of the different recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers was discussed. It was observed that in quantum dot lasers with very low threshold current density the temperature sensitivity of the threshold current arose from nonradiative recombinations. It was also observed that the emission from the wetting layer in the spontaneous emission spectra at threshold at 300k although its amount was very small. It was found that the lasing line was very narrow in all the temperature range demonstrating the high homogeneity of the dots.",

author = "Marko, \{I. P.\} and Adams, \{A. R.\} and Sweeney, \{S. J.\} and Sellers, \{I. R.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\} and Liu, \{H. Y.\} and Groom, \{K. M.\}",

year = "2004",

language = "English",

pages = "57--58",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Conference Digest - 2004 IEEE 19th International Semiconductor Laser Conference ; Conference date: 21-09-2004 Through 25-09-2004",

}

TY - JOUR

T1 - Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

AU - Marko, I. P.

AU - Adams, A. R.

AU - Sweeney, S. J.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Liu, H. Y.

AU - Groom, K. M.

PY - 2004

Y1 - 2004

N2 - A quantititive investigation of the different recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers was discussed. It was observed that in quantum dot lasers with very low threshold current density the temperature sensitivity of the threshold current arose from nonradiative recombinations. It was also observed that the emission from the wetting layer in the spontaneous emission spectra at threshold at 300k although its amount was very small. It was found that the lasing line was very narrow in all the temperature range demonstrating the high homogeneity of the dots.

AB - A quantititive investigation of the different recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers was discussed. It was observed that in quantum dot lasers with very low threshold current density the temperature sensitivity of the threshold current arose from nonradiative recombinations. It was also observed that the emission from the wetting layer in the spontaneous emission spectra at threshold at 300k although its amount was very small. It was found that the lasing line was very narrow in all the temperature range demonstrating the high homogeneity of the dots.

UR - https://www.scopus.com/pages/publications/17044383348

M3 - Conference article

AN - SCOPUS:17044383348

SN - 0899-9406

SP - 57

EP - 58

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Conference Digest - 2004 IEEE 19th International Semiconductor Laser Conference

Y2 - 21 September 2004 through 25 September 2004

ER -

Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

Abstract

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