Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

J. J. Lin; J. P. Bird

doi:10.1088/0953-8984/14/18/201

Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

J. J. Lin
, J. P. Bird

Department of Electrical Engineering

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Review article › peer-review

413 Scopus citations

Abstract

The results of the experimental study of the low-temperature electron dephasing time (τ_φ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τ_φ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

Original language	English
Article number	201
Pages (from-to)	R501-R596
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	18
DOIs	https://doi.org/10.1088/0953-8984/14/18/201
State	Published - May 13 2002

Access to Document

10.1088/0953-8984/14/18/201

Cite this

@article{b5c7cba7168a40fbbf74c0101084d456,

title = "Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures",

abstract = "The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.",

author = "Lin, \{J. J.\} and Bird, \{J. P.\}",

year = "2002",

month = may,

day = "13",

doi = "10.1088/0953-8984/14/18/201",

language = "English",

volume = "14",

pages = "R501--R596",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "18",

}

TY - JOUR

T1 - Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

AU - Lin, J. J.

AU - Bird, J. P.

PY - 2002/5/13

Y1 - 2002/5/13

N2 - The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

AB - The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

UR - https://www.scopus.com/pages/publications/0037071379

U2 - 10.1088/0953-8984/14/18/201

DO - 10.1088/0953-8984/14/18/201

M3 - Review article

AN - SCOPUS:0037071379

SN - 0953-8984

VL - 14

SP - R501-R596

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 18

M1 - 201

ER -

Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this