Radiation effects on compound formation in palladium-implanted silicon using a focused ion beam machine

In this paper we present results showing compound formation in silicon thin foils implanted with palladium ions under conditions of high fluence and high flux. This implantation was carried out using a focused ion beam machine. We observed accelerated compound formation under these implantation conditions which also showed less final defect formation. We conclude that the copious radiation damage such an implantation would cause is acting as a driving force for in-situ compound formation of Pd₂Si.