Abstract
Metal/insulator/n** plus -Si/p-Si (MINP) solar cells were fabricated on Wacker poly-Si (PC) and single-crystal Si (SC) by ion implantation to form a shallow junction. SC cells exhibited an average initial efficiency of 14. 7% compared to 9. 8% for PC cells. Irradiation with 1. 1 multiplied by 10**1 **6 e-/cm**2 , 1. 0-MeV electrons, caused a 60% reduction in efficiency for SC cells compared to 43% for PC cells. PC cells gave a higher J//s //c at end of life than did the SC cells. Differences in behavior between PC and SC cells were seen in I-V, I//s //c- V//o //c , spectral response, and I-V-T data. The improved radiation hardness of PC cells is attributed to zero segregation at grain boundaries which leaves less O in the grains with which irradiation can form B-O-v or v-O defects.
| Original language | English |
|---|---|
| Pages (from-to) | 646-651 |
| Number of pages | 6 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| State | Published - 1985 |
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