Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Takeyoshi Sugaya; Mutsuo Ogura; Yoshinobu Sugiyama; Toshiyuki Shimizu; Kenji Yonei; Kee Youn Jang; Jonathan P. Bird; David K. Ferry

doi:10.1063/1.1385344

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Takeyoshi Sugaya
, Mutsuo Ogura
, Yoshinobu Sugiyama
, Toshiyuki Shimizu
, Kenji Yonei
, Kee Youn Jang
, Jonathan P. Bird
, David K. Ferry

Department of Electrical Engineering

National Institute of Advanced Industrial Science and Technology
Shibaura Institute of Technology
Japan Science and Technology Agency
Arizona State University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

Original language	English
Pages (from-to)	371-373
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1385344
State	Published - Jul 16 2001

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title = "Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors",

abstract = "The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.",

author = "Takeyoshi Sugaya and Mutsuo Ogura and Yoshinobu Sugiyama and Toshiyuki Shimizu and Kenji Yonei and Jang, \{Kee Youn\} and Bird, \{Jonathan P.\} and Ferry, \{David K.\}",

year = "2001",

month = jul,

day = "16",

doi = "10.1063/1.1385344",

language = "English",

volume = "79",

pages = "371--373",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

AU - Sugaya, Takeyoshi

AU - Ogura, Mutsuo

AU - Sugiyama, Yoshinobu

AU - Shimizu, Toshiyuki

AU - Yonei, Kenji

AU - Jang, Kee Youn

AU - Bird, Jonathan P.

AU - Ferry, David K.

PY - 2001/7/16

Y1 - 2001/7/16

N2 - The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

AB - The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

UR - https://www.scopus.com/pages/publications/0035898350

U2 - 10.1063/1.1385344

DO - 10.1063/1.1385344

M3 - Article

AN - SCOPUS:0035898350

SN - 0003-6951

VL - 79

SP - 371

EP - 373

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

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