Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Y. Ochiai; S. Motooka; Y. Ujiie; N. Aoki; J. P. Bird; D. K. Ferry

doi:10.1088/1742-6596/245/1/012029

Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Y. Ochiai
, S. Motooka
, Y. Ujiie
, N. Aoki
, J. P. Bird
, D. K. Ferry

Department of Electrical Engineering

Chiba University
Arizona State University

Research output: Contribution to journal › Article › peer-review

Abstract

We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

Original language	English
Article number	012029
Journal	Journal of Physics: Conference Series
Volume	244
DOIs	https://doi.org/10.1088/1742-6596/245/1/012029
State	Published - 2010

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title = "Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene",

abstract = "We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.",

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AU - Ochiai, Y.

AU - Motooka, S.

AU - Ujiie, Y.

AU - Aoki, N.

AU - Bird, J. P.

AU - Ferry, D. K.

PY - 2010

Y1 - 2010

N2 - We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

AB - We report here the observation of quasi-periodic conductance fluctuations in the low temperature magneto-resistance of gated bi-layer (BL) field-effect transistors (FETs). Both correlation field analysis and conductance fluctuation behaviour suggests that the quantum transport in the BL-FETs closely resembles that in conventional semiconductor open quantum dots.

UR - https://www.scopus.com/pages/publications/78651257148

U2 - 10.1088/1742-6596/245/1/012029

DO - 10.1088/1742-6596/245/1/012029

M3 - Article

AN - SCOPUS:78651257148

SN - 1742-6588

VL - 244

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012029

ER -

Quantum fluctuations in the low temperature magneto-resistance of bi-layer graphene

Abstract

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