Pulsed laser deposition of metal oxide films

Quanxi Jia

doi:10.1117/12.321615

Pulsed laser deposition of metal oxide films

Quanxi Jia

Department of Materials Design and Innovation

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Pulsed laser deposition (PLD), which provides very unique features compared to the conventional physical vapor deposition technique such as sputtering, is one of the most powerful techniques to deposit conductive oxide thin films. Over the past several years, we have optimized the processing conditions to deposit high quality conductive RuO₂ and SrRuO₃ thin films by PLD. We show that the substrate temperature during the deposition process plays an important role in determining the structural and electrical properties of these films. Epitaxial RuO₂ and SrRuO₃ thin films with a room-temperature resistivity of 35 μΩ-cm and 280 μΩ-cm, respectively, have been successfully deposited by PLD.

Original language	English
Pages (from-to)	872-876
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3343
DOIs	https://doi.org/10.1117/12.321615
State	Published - 1998
Event	High-Power Laser Ablation - Santa Fe, NM, United States Duration: Apr 27 1998 → Apr 27 1998

Keywords

Conductive oxides
Pulsed laser deposition
RuO
SrRuO

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title = "Pulsed laser deposition of metal oxide films",

abstract = "Pulsed laser deposition (PLD), which provides very unique features compared to the conventional physical vapor deposition technique such as sputtering, is one of the most powerful techniques to deposit conductive oxide thin films. Over the past several years, we have optimized the processing conditions to deposit high quality conductive RuO2 and SrRuO3 thin films by PLD. We show that the substrate temperature during the deposition process plays an important role in determining the structural and electrical properties of these films. Epitaxial RuO2 and SrRuO3 thin films with a room-temperature resistivity of 35 μΩ-cm and 280 μΩ-cm, respectively, have been successfully deposited by PLD.",

keywords = "Conductive oxides, Pulsed laser deposition, RuO, SrRuO",

author = "Quanxi Jia",

year = "1998",

doi = "10.1117/12.321615",

language = "English",

volume = "3343",

pages = "872--876",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "High-Power Laser Ablation ; Conference date: 27-04-1998 Through 27-04-1998",

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TY - JOUR

T1 - Pulsed laser deposition of metal oxide films

AU - Jia, Quanxi

PY - 1998

Y1 - 1998

N2 - Pulsed laser deposition (PLD), which provides very unique features compared to the conventional physical vapor deposition technique such as sputtering, is one of the most powerful techniques to deposit conductive oxide thin films. Over the past several years, we have optimized the processing conditions to deposit high quality conductive RuO2 and SrRuO3 thin films by PLD. We show that the substrate temperature during the deposition process plays an important role in determining the structural and electrical properties of these films. Epitaxial RuO2 and SrRuO3 thin films with a room-temperature resistivity of 35 μΩ-cm and 280 μΩ-cm, respectively, have been successfully deposited by PLD.

AB - Pulsed laser deposition (PLD), which provides very unique features compared to the conventional physical vapor deposition technique such as sputtering, is one of the most powerful techniques to deposit conductive oxide thin films. Over the past several years, we have optimized the processing conditions to deposit high quality conductive RuO2 and SrRuO3 thin films by PLD. We show that the substrate temperature during the deposition process plays an important role in determining the structural and electrical properties of these films. Epitaxial RuO2 and SrRuO3 thin films with a room-temperature resistivity of 35 μΩ-cm and 280 μΩ-cm, respectively, have been successfully deposited by PLD.

KW - Conductive oxides

KW - Pulsed laser deposition

KW - RuO

KW - SrRuO

UR - https://www.scopus.com/pages/publications/32844473637

U2 - 10.1117/12.321615

DO - 10.1117/12.321615

M3 - Conference article

AN - SCOPUS:32844473637

SN - 0277-786X

VL - 3343

SP - 872

EP - 876

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - High-Power Laser Ablation

Y2 - 27 April 1998 through 27 April 1998

ER -

Pulsed laser deposition of metal oxide films

Abstract

Keywords

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