Abstract
In this article we describe the pulsed laser deposition of smooth, particulate-free, and high conductivity SrRuO3, which are well suited for use as bottom electrodes in high capacity integrated thin-film capacitors. The films were heteroepitaxially grown on (100) LaAlO3 substrates at temperatures above 650°C. Scanning tunneling microscopy measurements revealed that higher deposition temperatures produced larger grain sizes, and it was found from x-ray diffraction and four-probe tests that higher temperatures also led to improved film crystallinity and conductivity, respectively. At a deposition temperature of 775°C, the room-temperature resistivity of SrRuO3 films was 280 μΩ cm, and the residual resistivity ratio was 8.4, making these materials excellent candidates for use as thin-film electrodes.
| Original language | English |
|---|---|
| Pages (from-to) | 1080-1083 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 15 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1997 |
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