Abstract
Laser operation of passively Q-switched Nd3+:LSB microchip laser with Cr4+:YAG saturable absorber has been investigated theoretically and experimentally. Energy and temporal characteristics of sub-nanosecond output laser pulses have been studied using different combinations of output couplers and absorbers. Generalized model of Q-switched microchip laser has been proposed which takes into consideration thermalization and recombination in laser medium, spatial inhomogeneity of pump and laser intensity, and saturable absorber recovering. Good agreement between theory and experiment has been obtained for wide range of the pump power. Thermalization times of Nd 3+ ions in LSB crystal has been estimated to our best knowledge for the first time.
| Original language | English |
|---|---|
| Article number | 03 |
| Pages (from-to) | 22-29 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5447 |
| DOIs | |
| State | Published - 2004 |
| Event | Lasers for Measurements and Information Transfer 2004 - St. Petersburg, Russian Federation Duration: Jun 23 2004 → Jun 25 2004 |
Keywords
- Dynamics modeling
- Laser dynamics
- Microchip laser
- Passive Q-switch
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