Proposal for all-electrical measurement of T1 in semiconductors

Igor Žutić; Jaroslav Fabian; S. Das Sarma

doi:10.1063/1.1536270

Proposal for all-electrical measurement of T₁ in semiconductors

Igor Žutić
, Jaroslav Fabian
, S. Das Sarma

Physics

University of Graz
University of Maryland, College Park

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

A proposal to determine Spin relaxation time (T₁) by all-electrical measurements from the I-V characteristics was discussed. It was shown that several features specific to semiconductors could be exploited to provide a sensitive probe for T₁. The g-factor and the degree of the injected-carrier spin polarization was also calculated in a magnetic p-n junction.

Original language	English
Pages (from-to)	221-223
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.1536270
State	Published - Jan 13 2003

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10.1063/1.1536270

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abstract = "A proposal to determine Spin relaxation time (T1) by all-electrical measurements from the I-V characteristics was discussed. It was shown that several features specific to semiconductors could be exploited to provide a sensitive probe for T1. The g-factor and the degree of the injected-carrier spin polarization was also calculated in a magnetic p-n junction.",

author = "Igor {\v Z}uti{\'c} and Jaroslav Fabian and \{Das Sarma\}, S.",

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AU - Fabian, Jaroslav

AU - Das Sarma, S.

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AB - A proposal to determine Spin relaxation time (T1) by all-electrical measurements from the I-V characteristics was discussed. It was shown that several features specific to semiconductors could be exploited to provide a sensitive probe for T1. The g-factor and the degree of the injected-carrier spin polarization was also calculated in a magnetic p-n junction.

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DO - 10.1063/1.1536270

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Proposal for all-electrical measurement of T₁ in semiconductors

Abstract

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