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"Property phase diagrams" for compound semiconductors through data mining

  • Iowa State University

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

This paper highlights the capability of materials informatics to recreate "property phase diagrams" from an elemental level using electronic and crystal structure properties. A judicious selection of existing data mining techniques, such as Principal Component Analysis, Partial Least Squares Regression, and Correlated Function Expansion, are linked synergistically to predict bandgap and lattice parameters for different stoichiometries of GaxIn1-xAsSb1-y, starting from fundamental elemental descriptors. In particular, five such elemental descriptors, extracted from within a database of highly correlated descriptors, are shown to collectively capture the widely studied "bowing" of energy bandgaps seen in compound semiconductors. This is the first such demonstration, to our knowledge, of establishing relationship between discrete elemental descriptors and bandgap bowing, whose underpinning lies in the fundamentals of solid solution thermodyanamics.

Original languageEnglish
Pages (from-to)279-290
Number of pages12
JournalMaterials
Volume6
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Bandgap engineering
  • Crystal stoichiometry
  • Data mining
  • High dimensional data
  • III-V materials
  • Materials informatics
  • Phase diagrams
  • Semiconductor compounds
  • Structure-property relationships

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