PROPERTIES OF SURFACE CARRIERS AT GaAs - NATIVE-OXIDE INTERFACES.

J. E. Stannard; T. A. Kennedy; B. D. McCombe

doi:10.1116/1.569007

PROPERTIES OF SURFACE CARRIERS AT GaAs - NATIVE-OXIDE INTERFACES.

J. E. Stannard
, T. A. Kennedy
, B. D. McCombe

Physics

Research output: Contribution to conference › Paper › peer-review

9 Scopus citations

Abstract

GaAs MOS structures were grown using an anodic oxidation process with the electrotype first described by H. Hasegawa, K. E. Forward, and H. L. Hartnagle in order to study surface accumulation and inversion carrier properties on n-type material. These native oxide layers have a breakdown strength between 10**5 and 5 multiplied by 10**6 V/cm. C-V measurements at 300 K indicate midgap surface state densities of 10**1**2 cm** minus **2 eV** minus **1. Upon cooling the flat band shift increases substantially, indicating a surface state density which is higher near the conduction band edge. The utility of contactless microwave conductance measurements of surface carrier properties in the Si-SiO//2 system is shown and their applicability to the GaAs-native-oxide system investigated. The results obtained indicate the conditions under which these techniques may be used.

Original language	English
Pages	869-972
Number of pages	104
DOIs	https://doi.org/10.1116/1.569007
State	Published - 1976
Event	3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent - San Diego, CA, USA Duration: Feb 3 1976 → Feb 5 1976

Conference

Conference	3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent
City	San Diego, CA, USA
Period	02/3/76 → 02/5/76

Access to Document

10.1116/1.569007

Cite this

@conference{c044209386b84bb0b6293d2b7c168d54,

title = "PROPERTIES OF SURFACE CARRIERS AT GaAs - NATIVE-OXIDE INTERFACES.",

abstract = "GaAs MOS structures were grown using an anodic oxidation process with the electrotype first described by H. Hasegawa, K. E. Forward, and H. L. Hartnagle in order to study surface accumulation and inversion carrier properties on n-type material. These native oxide layers have a breakdown strength between 10**5 and 5 multiplied by 10**6 V/cm. C-V measurements at 300 K indicate midgap surface state densities of 10**1**2 cm** minus **2 eV** minus **1. Upon cooling the flat band shift increases substantially, indicating a surface state density which is higher near the conduction band edge. The utility of contactless microwave conductance measurements of surface carrier properties in the Si-SiO//2 system is shown and their applicability to the GaAs-native-oxide system investigated. The results obtained indicate the conditions under which these techniques may be used.",

author = "Stannard, \{J. E.\} and Kennedy, \{T. A.\} and McCombe, \{B. D.\}",

year = "1976",

doi = "10.1116/1.569007",

language = "English",

pages = "869--972",

note = "3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent ; Conference date: 03-02-1976 Through 05-02-1976",

}

TY - CONF

T1 - PROPERTIES OF SURFACE CARRIERS AT GaAs - NATIVE-OXIDE INTERFACES.

AU - Stannard, J. E.

AU - Kennedy, T. A.

AU - McCombe, B. D.

PY - 1976

Y1 - 1976

N2 - GaAs MOS structures were grown using an anodic oxidation process with the electrotype first described by H. Hasegawa, K. E. Forward, and H. L. Hartnagle in order to study surface accumulation and inversion carrier properties on n-type material. These native oxide layers have a breakdown strength between 10**5 and 5 multiplied by 10**6 V/cm. C-V measurements at 300 K indicate midgap surface state densities of 10**1**2 cm** minus **2 eV** minus **1. Upon cooling the flat band shift increases substantially, indicating a surface state density which is higher near the conduction band edge. The utility of contactless microwave conductance measurements of surface carrier properties in the Si-SiO//2 system is shown and their applicability to the GaAs-native-oxide system investigated. The results obtained indicate the conditions under which these techniques may be used.

AB - GaAs MOS structures were grown using an anodic oxidation process with the electrotype first described by H. Hasegawa, K. E. Forward, and H. L. Hartnagle in order to study surface accumulation and inversion carrier properties on n-type material. These native oxide layers have a breakdown strength between 10**5 and 5 multiplied by 10**6 V/cm. C-V measurements at 300 K indicate midgap surface state densities of 10**1**2 cm** minus **2 eV** minus **1. Upon cooling the flat band shift increases substantially, indicating a surface state density which is higher near the conduction band edge. The utility of contactless microwave conductance measurements of surface carrier properties in the Si-SiO//2 system is shown and their applicability to the GaAs-native-oxide system investigated. The results obtained indicate the conditions under which these techniques may be used.

UR - https://www.scopus.com/pages/publications/0016973935

U2 - 10.1116/1.569007

DO - 10.1116/1.569007

M3 - Paper

AN - SCOPUS:0016973935

SP - 869

EP - 972

T2 - 3rd Annu Conf on the Phys of Compd Semicond Interfaces, Proc, Nav Electron Lab Cent

Y2 - 3 February 1976 through 5 February 1976

ER -

PROPERTIES OF SURFACE CARRIERS AT GaAs - NATIVE-OXIDE INTERFACES.

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this