Properties of sputtered amorphous silicon/crystalline silicon solar cells

B. Jagannathan; W. A. Anderson

doi:10.1109/pvsc.1996.564061

Properties of sputtered amorphous silicon/crystalline silicon solar cells

B. Jagannathan
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

DC magnetron sputtering of amorphous silicon (a-Si), using a n-type silicon target, onto p-type crystalline silicon (c-Si) substrates was found to result in heterojunction solar cells. The process yielded 10.7% efficient solar cells, having a short-circuit current density (J_sc) of 34 mA/cm² and an open circuit voltage (V_oc) of 0.55 volts. The a-Si/c-Si structure had good junction characteristics, having a zero bias depletion width of 0.65 μm in c-Si. The photovoltaic (pv) properties of the devices have been investigated for a-Si thickness, c-Si resistivity, and substrate temperature. The amorphous/crystalline interface was found to be a limiting factor in device performance, and this was studied by both processing and electrical tests. The effect of interface traps due to sputtering induced damage has been studied by thermally stimulated capacitance (TSCAP) measurements.

Original language	English
Pages (from-to)	533-536
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
DOIs	https://doi.org/10.1109/pvsc.1996.564061
State	Published - 1996
Event	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: May 13 1996 → May 17 1996

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10.1109/pvsc.1996.564061

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title = "Properties of sputtered amorphous silicon/crystalline silicon solar cells",

abstract = "DC magnetron sputtering of amorphous silicon (a-Si), using a n-type silicon target, onto p-type crystalline silicon (c-Si) substrates was found to result in heterojunction solar cells. The process yielded 10.7\% efficient solar cells, having a short-circuit current density (Jsc) of 34 mA/cm2 and an open circuit voltage (Voc) of 0.55 volts. The a-Si/c-Si structure had good junction characteristics, having a zero bias depletion width of 0.65 μm in c-Si. The photovoltaic (pv) properties of the devices have been investigated for a-Si thickness, c-Si resistivity, and substrate temperature. The amorphous/crystalline interface was found to be a limiting factor in device performance, and this was studied by both processing and electrical tests. The effect of interface traps due to sputtering induced damage has been studied by thermally stimulated capacitance (TSCAP) measurements.",

author = "B. Jagannathan and Anderson, \{W. A.\}",

year = "1996",

doi = "10.1109/pvsc.1996.564061",

language = "English",

pages = "533--536",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - JOUR

T1 - Properties of sputtered amorphous silicon/crystalline silicon solar cells

AU - Jagannathan, B.

AU - Anderson, W. A.

PY - 1996

Y1 - 1996

N2 - DC magnetron sputtering of amorphous silicon (a-Si), using a n-type silicon target, onto p-type crystalline silicon (c-Si) substrates was found to result in heterojunction solar cells. The process yielded 10.7% efficient solar cells, having a short-circuit current density (Jsc) of 34 mA/cm2 and an open circuit voltage (Voc) of 0.55 volts. The a-Si/c-Si structure had good junction characteristics, having a zero bias depletion width of 0.65 μm in c-Si. The photovoltaic (pv) properties of the devices have been investigated for a-Si thickness, c-Si resistivity, and substrate temperature. The amorphous/crystalline interface was found to be a limiting factor in device performance, and this was studied by both processing and electrical tests. The effect of interface traps due to sputtering induced damage has been studied by thermally stimulated capacitance (TSCAP) measurements.

AB - DC magnetron sputtering of amorphous silicon (a-Si), using a n-type silicon target, onto p-type crystalline silicon (c-Si) substrates was found to result in heterojunction solar cells. The process yielded 10.7% efficient solar cells, having a short-circuit current density (Jsc) of 34 mA/cm2 and an open circuit voltage (Voc) of 0.55 volts. The a-Si/c-Si structure had good junction characteristics, having a zero bias depletion width of 0.65 μm in c-Si. The photovoltaic (pv) properties of the devices have been investigated for a-Si thickness, c-Si resistivity, and substrate temperature. The amorphous/crystalline interface was found to be a limiting factor in device performance, and this was studied by both processing and electrical tests. The effect of interface traps due to sputtering induced damage has been studied by thermally stimulated capacitance (TSCAP) measurements.

UR - https://www.scopus.com/pages/publications/0030399014

U2 - 10.1109/pvsc.1996.564061

DO - 10.1109/pvsc.1996.564061

M3 - Conference article

AN - SCOPUS:0030399014

SN - 0160-8371

SP - 533

EP - 536

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Properties of sputtered amorphous silicon/crystalline silicon solar cells

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