Properties of Fe/Si heterostructure grown by MOCVD

Youdou Zheng; Rong Zhang; Yong Yan; Duan Feng; T. W. Kim; B. D. McCombe

doi:10.1007/BF00343424

Properties of Fe/Si heterostructure grown by MOCVD

Youdou Zheng
, Rong Zhang
, Yong Yan
, Duan Feng
, T. W. Kim
, B. D. McCombe

Physics

Nanjing University
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)₅. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.

Original language	English
Pages (from-to)	237-239
Number of pages	3
Journal	Applied Physics A: Solids and Surfaces
Volume	50
Issue number	2
DOIs	https://doi.org/10.1007/BF00343424
State	Published - Feb 1990

Keywords

68.55.+b

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10.1007/BF00343424

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title = "Properties of Fe/Si heterostructure grown by MOCVD",

abstract = "An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.",

keywords = "68.55.+b",

author = "Youdou Zheng and Rong Zhang and Yong Yan and Duan Feng and Kim, \{T. W.\} and McCombe, \{B. D.\}",

year = "1990",

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doi = "10.1007/BF00343424",

language = "English",

volume = "50",

pages = "237--239",

journal = "Applied Physics A: Solids and Surfaces",

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T1 - Properties of Fe/Si heterostructure grown by MOCVD

AU - Zheng, Youdou

AU - Zhang, Rong

AU - Yan, Yong

AU - Feng, Duan

AU - Kim, T. W.

AU - McCombe, B. D.

PY - 1990/2

Y1 - 1990/2

N2 - An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.

AB - An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.

KW - 68.55.+b

UR - https://www.scopus.com/pages/publications/0025384154

U2 - 10.1007/BF00343424

DO - 10.1007/BF00343424

M3 - Article

AN - SCOPUS:0025384154

SN - 0721-7250

VL - 50

SP - 237

EP - 239

JO - Applied Physics A: Solids and Surfaces

JF - Applied Physics A: Solids and Surfaces

IS - 2

ER -

Properties of Fe/Si heterostructure grown by MOCVD

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