Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onz n-lnP

Y. S. Lee; W. A. Anderson

doi:10.1007/BF02651283

Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onz n-lnP

Y. S. Lee
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Current-voltage-temperature (I-V-T) studies were utilized in evaluating conduction mechanisms in metal/insulator/n-InP (MIS) diodes. Comparisons are made between thermal and chemical oxide growth, chemical preparation by H₂SO₄ {dot plus} HF versus Brmethanol and KOH-methanol, both with and without a proximity cap during sintering of the ohmic contact. Conventional thermal oxides gave non-linear I-V-T curves indicative of a significant continuous surface state control. An InP proximity cap used to protect the front surface of the sample during sintering of the ohmic contact gave more ideal characteristics. For example, thermionic emission control with barrier height(ø_B) increased from 0.590 to 0.677 eV resulted in an ideality factor of 1.10. Best I-V data were obtained using a chemical oxide to achieve ø_B≈ 0.86 eV. A chemical oxide after proximity cap gave a high voltage thermionic field emission component. Deep level transient spectroscopy revealed a bulk trap with activation energy E_A≈ 0.64 eV and a surface trap with E_A= 0.60 eV.

Original language	English
Pages (from-to)	591-596
Number of pages	6
Journal	Journal of Electronic Materials
Volume	19
Issue number	6
DOIs	https://doi.org/10.1007/BF02651283
State	Published - Jun 1990

Keywords

electronic properties
InP
surfaces

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10.1007/BF02651283

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title = "Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onz n-lnP",

abstract = "Current-voltage-temperature (I-V-T) studies were utilized in evaluating conduction mechanisms in metal/insulator/n-InP (MIS) diodes. Comparisons are made between thermal and chemical oxide growth, chemical preparation by H2SO4 \{dot plus\} HF versus Brmethanol and KOH-methanol, both with and without a proximity cap during sintering of the ohmic contact. Conventional thermal oxides gave non-linear I-V-T curves indicative of a significant continuous surface state control. An InP proximity cap used to protect the front surface of the sample during sintering of the ohmic contact gave more ideal characteristics. For example, thermionic emission control with barrier height({\o} B) increased from 0.590 to 0.677 eV resulted in an ideality factor of 1.10. Best I-V data were obtained using a chemical oxide to achieve {\o} B≈ 0.86 eV. A chemical oxide after proximity cap gave a high voltage thermionic field emission component. Deep level transient spectroscopy revealed a bulk trap with activation energy E A≈ 0.64 eV and a surface trap with E A= 0.60 eV.",

keywords = "electronic properties, InP, surfaces",

author = "Lee, \{Y. S.\} and Anderson, \{W. A.\}",

year = "1990",

month = jun,

doi = "10.1007/BF02651283",

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volume = "19",

pages = "591--596",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onz n-lnP

AU - Lee, Y. S.

AU - Anderson, W. A.

PY - 1990/6

Y1 - 1990/6

N2 - Current-voltage-temperature (I-V-T) studies were utilized in evaluating conduction mechanisms in metal/insulator/n-InP (MIS) diodes. Comparisons are made between thermal and chemical oxide growth, chemical preparation by H2SO4 {dot plus} HF versus Brmethanol and KOH-methanol, both with and without a proximity cap during sintering of the ohmic contact. Conventional thermal oxides gave non-linear I-V-T curves indicative of a significant continuous surface state control. An InP proximity cap used to protect the front surface of the sample during sintering of the ohmic contact gave more ideal characteristics. For example, thermionic emission control with barrier height(ø B) increased from 0.590 to 0.677 eV resulted in an ideality factor of 1.10. Best I-V data were obtained using a chemical oxide to achieve ø B≈ 0.86 eV. A chemical oxide after proximity cap gave a high voltage thermionic field emission component. Deep level transient spectroscopy revealed a bulk trap with activation energy E A≈ 0.64 eV and a surface trap with E A= 0.60 eV.

AB - Current-voltage-temperature (I-V-T) studies were utilized in evaluating conduction mechanisms in metal/insulator/n-InP (MIS) diodes. Comparisons are made between thermal and chemical oxide growth, chemical preparation by H2SO4 {dot plus} HF versus Brmethanol and KOH-methanol, both with and without a proximity cap during sintering of the ohmic contact. Conventional thermal oxides gave non-linear I-V-T curves indicative of a significant continuous surface state control. An InP proximity cap used to protect the front surface of the sample during sintering of the ohmic contact gave more ideal characteristics. For example, thermionic emission control with barrier height(ø B) increased from 0.590 to 0.677 eV resulted in an ideality factor of 1.10. Best I-V data were obtained using a chemical oxide to achieve ø B≈ 0.86 eV. A chemical oxide after proximity cap gave a high voltage thermionic field emission component. Deep level transient spectroscopy revealed a bulk trap with activation energy E A≈ 0.64 eV and a surface trap with E A= 0.60 eV.

KW - electronic properties

KW - InP

KW - surfaces

UR - https://www.scopus.com/pages/publications/0025446441

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DO - 10.1007/BF02651283

M3 - Article

AN - SCOPUS:0025446441

SN - 0361-5235

VL - 19

SP - 591

EP - 596

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes onz n-lnP

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Keywords

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