Probing the structure of semiconductor superlattices and heterostructures by EXAFS

Y. H. Kao; S. C. Woronick; E. Canova; G. W. Su; L. L. Chang

doi:10.1016/0039-6028(86)90473-5

Probing the structure of semiconductor superlattices and heterostructures by EXAFS

Y. H. Kao
, S. C. Woronick
, E. Canova
, G. W. Su
, L. L. Chang

Physics

Stony Brook University
IBM

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices.

Original language	English
Pages (from-to)	567-572
Number of pages	6
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90473-5
State	Published - Aug 3 1986

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abstract = "We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices.",

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AU - Kao, Y. H.

AU - Woronick, S. C.

AU - Canova, E.

AU - Su, G. W.

AU - Chang, L. L.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices.

AB - We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices.

UR - https://www.scopus.com/pages/publications/2342554042

U2 - 10.1016/0039-6028(86)90473-5

DO - 10.1016/0039-6028(86)90473-5

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VL - 174

SP - 567

EP - 572

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Probing the structure of semiconductor superlattices and heterostructures by EXAFS

Abstract

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