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Probing terahertz dynamics in semiconductor nanostructures with the UCSB free-electron lasers

  • S. J. Allen
  • , K. Craig
  • , C. L. Felix
  • , P. Guimarães
  • , J. N. Heyman
  • , J. P. Kaminski
  • , B. J. Keay
  • , A. G. Markelz
  • , G. Ramian
  • , J. S. Scott
  • , M. S. Sherwin
  • , K. L. Campman
  • , P. F. Hopkins
  • , A. C. Gossard
  • , D. Chow
  • , M. Lui
  • , T. Y. Liu
  • University of California at Santa Barbara
  • HRL Laboratories

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.

Original languageEnglish
Pages (from-to)250-255
Number of pages6
JournalJournal of Luminescence
Volume60-61
Issue numberC
DOIs
StatePublished - Apr 1994

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