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Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy

  • D. A. Tenne
  • , A. Bruchhausen
  • , N. D. Lanzillotti-Kimura
  • , A. Fainstein
  • , R. S. Katiyar
  • , A. Cantarero
  • , A. Soukiassian
  • , V. Vaithyanathan
  • , J. H. Haeni
  • , W. Tian
  • , D. G. Schlom
  • , K. J. Choi
  • , D. M. Kim
  • , C. B. Eom
  • , H. P. Sun
  • , X. Q. Pan
  • , Y. L. Li
  • , L. Q. Chen
  • , Q. X. Jia
  • , S. M. Nakhmanson
  • K. M. Rabe, X. X. Xi
  • Pennsylvania State University
  • Boise State University
  • Comisión Nacional de Energía Atómica
  • University of Puerto Rico
  • University of Valencia
  • University of Wisconsin-Madison
  • University of Michigan, Ann Arbor
  • Los Alamos National Laboratory Materials Science and Technology Division
  • Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journalArticlepeer-review

302 Scopus citations

Abstract

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Original languageEnglish
Pages (from-to)1614-1616
Number of pages3
JournalScience
Volume313
Issue number5793
DOIs
StatePublished - Sep 15 2006

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