Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures

J. G. Tischler; B. A. Weinstein; B. D. McCombe

doi:10.1002/(SICI)1521-3951(199909)215:1<263::AID-PSSB263>3.0.CO;2-O

Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures

J. G. Tischler
, B. A. Weinstein
, B. D. McCombe

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Photoluminescence studies of neutral and charged excitons in modulation doped GaAs/Al_0.3Ga_0.7As quantum wells are performed as functions of applied pressure, temperature, and excitation power and frequency. Varying both pressure and incident power allows sensitive selection of the different exciton transitions. The Γ-X crossover in the barriers at ≈7 to 9 kbar accelerates photo-pumping of electrons to the barriers. A semi-empirical kinetic model is able to account for the power and pressure dependencies of this process.

Original language	English
Pages (from-to)	263-267
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	215
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199909)215:1<263::AID-PSSB263>3.0.CO;2-O
State	Published - Sep 1999

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abstract = "Photoluminescence studies of neutral and charged excitons in modulation doped GaAs/Al0.3Ga0.7As quantum wells are performed as functions of applied pressure, temperature, and excitation power and frequency. Varying both pressure and incident power allows sensitive selection of the different exciton transitions. The Γ-X crossover in the barriers at ≈7 to 9 kbar accelerates photo-pumping of electrons to the barriers. A semi-empirical kinetic model is able to account for the power and pressure dependencies of this process.",

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AU - Weinstein, B. A.

AU - McCombe, B. D.

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N2 - Photoluminescence studies of neutral and charged excitons in modulation doped GaAs/Al0.3Ga0.7As quantum wells are performed as functions of applied pressure, temperature, and excitation power and frequency. Varying both pressure and incident power allows sensitive selection of the different exciton transitions. The Γ-X crossover in the barriers at ≈7 to 9 kbar accelerates photo-pumping of electrons to the barriers. A semi-empirical kinetic model is able to account for the power and pressure dependencies of this process.

AB - Photoluminescence studies of neutral and charged excitons in modulation doped GaAs/Al0.3Ga0.7As quantum wells are performed as functions of applied pressure, temperature, and excitation power and frequency. Varying both pressure and incident power allows sensitive selection of the different exciton transitions. The Γ-X crossover in the barriers at ≈7 to 9 kbar accelerates photo-pumping of electrons to the barriers. A semi-empirical kinetic model is able to account for the power and pressure dependencies of this process.

UR - https://www.scopus.com/pages/publications/0033242152

U2 - 10.1002/(SICI)1521-3951(199909)215:1<263::AID-PSSB263>3.0.CO;2-O

DO - 10.1002/(SICI)1521-3951(199909)215:1<263::AID-PSSB263>3.0.CO;2-O

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures

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