Abstract
Germanium disulfide exhibits three solid forms: an amorphous form (a-GeS2), a layer-structure crystalline form (2D-GeS2), and a quartzlike crystalline form (3D-GeS2). We have carried out a series of experiments to determine the effect of pressure on the optical-absorption edge and the near-infrared refractive index of all three forms. We find that pressure causes the absorption edge to red-shift and the refractive index to increase, the sensitivity to pressure being greatest for a-GeS2, less for 2D-GeS2, and least for 3D-GeS2. The size of the initial effect of pressure on the band gap of a-GeS2 (-23 meV/kbar) is among the largest known for any semiconductor. Analysis of our pressure-optical data for all three forms, taken together with a recently established correlation between covalent-network dimensionality and photoelastic response, leads us to conclude that a-GeS2 is not a 3D-network glass akin to silica, but instead has lower network dimensionality. This is consistent with a class of molecular-glass models such as the Flory model for 1D-network glasses and the Phillips "partially polymerized cluster" model.
| Original language | English |
|---|---|
| Pages (from-to) | 781-792 |
| Number of pages | 12 |
| Journal | Physical Review B-Condensed Matter |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1982 |
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