Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells

We report pressure dependent photomodulated reflectance (PR) measurements on a series of dilute-N InGaNAs/GaAs multiple quantum wells (MQWs). Our experimental results indicate the presence of important N-related disorder effects due to different nearest-neighbour N-cation configurations The quantum well transition energies obtained from the PR spectra are modelled using a realistic 10-band k · p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. By matching experiment with theory we are able to determine accurately the band structure and thus predict some important material parameters for dilute-N InGaAsN alloys.