Preparation of epitaxial uranium dicarbide thin films by polymer-assisted deposition

Robert E. Jilek; Eve Bauer; Anthony K. Burrell; Thomas M. McCleskey; Quanxi Jia; Brian L. Scott; Miles F. Beaux; Tomasz Durakiewicz; John J. Joyce; Kirk D. Rector; Jie Xiong; Krzysztof Gofryk; Filip Ronning; Richard L. Martin

doi:10.1021/cm402655p

Preparation of epitaxial uranium dicarbide thin films by polymer-assisted deposition

Robert E. Jilek
, Eve Bauer
, Anthony K. Burrell
, Thomas M. McCleskey
, Quanxi Jia
, Brian L. Scott
, Miles F. Beaux
, Tomasz Durakiewicz
, John J. Joyce
, Kirk D. Rector
, Jie Xiong
, Krzysztof Gofryk
, Filip Ronning
, Richard L. Martin

Department of Materials Design and Innovation

Los Alamos National Laboratory
Los Alamos National Laboratory Theoretical Division

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

High quality epitaxial thin films of cubic UC₂ were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC₂ (>1765 C) at room temperature. The resistivity and UPS data indicate that UC ₂ has relatively low electrical conductivity consistent with HSE hybrid DFT calculations showing a narrow band gap. In situ XRD measurements show that the UC₂ films oxidize to U₃O₈ above 200 C.

Original language	English
Pages (from-to)	4373-4377
Number of pages	5
Journal	Chemistry of Materials
Volume	25
Issue number	21
DOIs	https://doi.org/10.1021/cm402655p
State	Published - Nov 12 2013

Keywords

actinide carbide
epitaxial thin film
nuclear energy

Access to Document

10.1021/cm402655p

Cite this

@article{31a649d2250f4c2b9013e8aace05fbb9,

title = "Preparation of epitaxial uranium dicarbide thin films by polymer-assisted deposition",

abstract = "High quality epitaxial thin films of cubic UC2 were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC2 (>1765 C) at room temperature. The resistivity and UPS data indicate that UC 2 has relatively low electrical conductivity consistent with HSE hybrid DFT calculations showing a narrow band gap. In situ XRD measurements show that the UC2 films oxidize to U3O8 above 200 C.",

keywords = "actinide carbide, epitaxial thin film, nuclear energy",

author = "Jilek, \{Robert E.\} and Eve Bauer and Burrell, \{Anthony K.\} and McCleskey, \{Thomas M.\} and Quanxi Jia and Scott, \{Brian L.\} and Beaux, \{Miles F.\} and Tomasz Durakiewicz and Joyce, \{John J.\} and Rector, \{Kirk D.\} and Jie Xiong and Krzysztof Gofryk and Filip Ronning and Martin, \{Richard L.\}",

year = "2013",

month = nov,

day = "12",

doi = "10.1021/cm402655p",

language = "English",

volume = "25",

pages = "4373--4377",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "21",

}

TY - JOUR

T1 - Preparation of epitaxial uranium dicarbide thin films by polymer-assisted deposition

AU - Jilek, Robert E.

AU - Bauer, Eve

AU - Burrell, Anthony K.

AU - McCleskey, Thomas M.

AU - Jia, Quanxi

AU - Scott, Brian L.

AU - Beaux, Miles F.

AU - Durakiewicz, Tomasz

AU - Joyce, John J.

AU - Rector, Kirk D.

AU - Xiong, Jie

AU - Gofryk, Krzysztof

AU - Ronning, Filip

AU - Martin, Richard L.

PY - 2013/11/12

Y1 - 2013/11/12

N2 - High quality epitaxial thin films of cubic UC2 were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC2 (>1765 C) at room temperature. The resistivity and UPS data indicate that UC 2 has relatively low electrical conductivity consistent with HSE hybrid DFT calculations showing a narrow band gap. In situ XRD measurements show that the UC2 films oxidize to U3O8 above 200 C.

AB - High quality epitaxial thin films of cubic UC2 were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC2 (>1765 C) at room temperature. The resistivity and UPS data indicate that UC 2 has relatively low electrical conductivity consistent with HSE hybrid DFT calculations showing a narrow band gap. In situ XRD measurements show that the UC2 films oxidize to U3O8 above 200 C.

KW - actinide carbide

KW - epitaxial thin film

KW - nuclear energy

UR - https://www.scopus.com/pages/publications/84887597454

U2 - 10.1021/cm402655p

DO - 10.1021/cm402655p

M3 - Article

AN - SCOPUS:84887597454

SN - 0897-4756

VL - 25

SP - 4373

EP - 4377

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 21

ER -

Preparation of epitaxial uranium dicarbide thin films by polymer-assisted deposition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this