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Prediction of optical band gap of β-(AlxGa1-x)2O3 using material informatics

  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this study, the optical band gap of β-(AlxGa1-x)2O3 versus the Al composition x is predicted using principal component regression and a Gaussian stochastic process. Properties were sourced from other mature Al-alloyed compound semiconductors to form a band gap model. It is found that the electronic band gap, the thermal conductivity, and the Al composition have the greatest influences on the optical band gap. A final relation is generated from a hybrid informatics approach combining information gained from multiple models. The optical band gap of β-(AlxGa1-x)2O3 versus the Al composition is predicted and agrees well with measured optical band gap.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalMaterials Discovery
Volume11
DOIs
StatePublished - Mar 2018

Keywords

  • Electronic bandgap
  • Material informatics
  • Optical bandgap
  • β-(AlGa)O

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