Abstract
In this study, the optical band gap of β-(AlxGa1-x)2O3 versus the Al composition x is predicted using principal component regression and a Gaussian stochastic process. Properties were sourced from other mature Al-alloyed compound semiconductors to form a band gap model. It is found that the electronic band gap, the thermal conductivity, and the Al composition have the greatest influences on the optical band gap. A final relation is generated from a hybrid informatics approach combining information gained from multiple models. The optical band gap of β-(AlxGa1-x)2O3 versus the Al composition is predicted and agrees well with measured optical band gap.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Materials Discovery |
| Volume | 11 |
| DOIs | |
| State | Published - Mar 2018 |
Keywords
- Electronic bandgap
- Material informatics
- Optical bandgap
- β-(AlGa)O
Fingerprint
Dive into the research topics of 'Prediction of optical band gap of β-(AlxGa1-x)2O3 using material informatics'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver