TY - GEN
T1 - Potential well engineering by partial oxidation of TiN for high-speed and low-voltage flash memory with good 125°C data retention and excellent endurance
AU - Zhang, Gang
AU - Ra, Chang Ho
AU - Li, Hua Min
AU - Yang, Cheng
AU - Yoo, Won Jong
PY - 2009
Y1 - 2009
N2 - Potential well engineering is proposed for NAND Flash memory. With a variable (∼2nm-4.3nm) tunnel barrier, the engineered well (EW) enhances tunneling of carriers during program/erase (P/E) to result in fast P/E, while it suppresses charge loss under the retention mode to result in good data retention. The EWalso improves endurance, as it is insensitive to the P/E stress induced tunnel barrier degradation. The EW demonstrated in this work is formed by partial oxidation of TiN at the interfaces of the SiO2/TiN/SiO2 stack during rapid thermal process (RTP), and its band profile is characterized by XPS, TEM, internal photoemission (IPE), XRD, and band simulation. The memory devices with an EW show promising performances in fast program (<μs), low-voltage operation (6-8MV/cm), good 10-year data retention at 125°C, and excellent endurance (>107 P/E cycles).
AB - Potential well engineering is proposed for NAND Flash memory. With a variable (∼2nm-4.3nm) tunnel barrier, the engineered well (EW) enhances tunneling of carriers during program/erase (P/E) to result in fast P/E, while it suppresses charge loss under the retention mode to result in good data retention. The EWalso improves endurance, as it is insensitive to the P/E stress induced tunnel barrier degradation. The EW demonstrated in this work is formed by partial oxidation of TiN at the interfaces of the SiO2/TiN/SiO2 stack during rapid thermal process (RTP), and its band profile is characterized by XPS, TEM, internal photoemission (IPE), XRD, and band simulation. The memory devices with an EW show promising performances in fast program (<μs), low-voltage operation (6-8MV/cm), good 10-year data retention at 125°C, and excellent endurance (>107 P/E cycles).
UR - https://www.scopus.com/pages/publications/77952334387
U2 - 10.1109/IEDM.2009.5424212
DO - 10.1109/IEDM.2009.5424212
M3 - Conference contribution
AN - SCOPUS:77952334387
SN - 9781424456406
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 34.5.1-34.5.4
BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
T2 - 2009 International Electron Devices Meeting, IEDM 2009
Y2 - 7 December 2009 through 9 December 2009
ER -