Polycrystalline GeSn thin films on Si formed by alloy evaporation

Munho Kim; Wenjuan Fan; Jung Hun Seo; Namki Cho; Shih Chia Liu; Dalong Geng; Yonghao Liu; Shaoqin Gong; Xudong Wang; Weidong Zhou; Zhenqiang Ma

doi:10.7567/APEX.8.061301

Polycrystalline GeSn thin films on Si formed by alloy evaporation

Munho Kim
, Wenjuan Fan
, Jung Hun Seo
, Namki Cho
, Shih Chia Liu
, Dalong Geng
, Yonghao Liu
, Shaoqin Gong
, Xudong Wang
, Weidong Zhou
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
University of Texas at Arlington

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

Original language	English
Article number	061301
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.061301
State	Published - Jun 1 2015

Access to Document

10.7567/APEX.8.061301

Cite this

@article{23629df3e20d48679e861199b67cbc1c,

title = "Polycrystalline GeSn thin films on Si formed by alloy evaporation",

abstract = "Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5\% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5\% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.",

author = "Munho Kim and Wenjuan Fan and Seo, \{Jung Hun\} and Namki Cho and Liu, \{Shih Chia\} and Dalong Geng and Yonghao Liu and Shaoqin Gong and Xudong Wang and Weidong Zhou and Zhenqiang Ma",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = jun,

day = "1",

doi = "10.7567/APEX.8.061301",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Polycrystalline GeSn thin films on Si formed by alloy evaporation

AU - Kim, Munho

AU - Fan, Wenjuan

AU - Seo, Jung Hun

AU - Cho, Namki

AU - Liu, Shih Chia

AU - Geng, Dalong

AU - Liu, Yonghao

AU - Gong, Shaoqin

AU - Wang, Xudong

AU - Zhou, Weidong

AU - Ma, Zhenqiang

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

AB - Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

UR - https://www.scopus.com/pages/publications/84930738802

U2 - 10.7567/APEX.8.061301

DO - 10.7567/APEX.8.061301

M3 - Article

AN - SCOPUS:84930738802

SN - 1882-0778

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 061301

ER -

Polycrystalline GeSn thin films on Si formed by alloy evaporation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this