Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields

Z. H. Huang; S. D. Liang; C. Y. Chen; D. L. Lin

doi:10.1088/0953-8984/10/9/005

Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields

Z. H. Huang
, S. D. Liang
, C. Y. Chen
, D. L. Lin

Physics

Guangzhou University
The University of Hong Kong
China Center of Advanced Science and Technology World Laboratory

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Polaronic effects on the ground state of a donor in GaAs/Al_1-xGa_xAs and ZnSeXZn_1-xCd_xSe quantum wells under the influence of an external electric field are investigated for the impurity atom doped at various positions. The confined electron interacts with the interface as well as confined phonon modes that exist in such structures. It is found that such effects in II-VI compounds are in general much more significant than in III-V compounds, reflecting the stronger electron-phonon coupling in more ionic II-VI materials. The ground state energy of the impurity is calculated by means of the Lee, Low and Pines transformation. Contributions from confined and interface phonon modes are considered separately and results calculated for various well widths, field strengths and different impurity positions are presented and discussed.

Original language	English
Pages (from-to)	1985-1997
Number of pages	13
Journal	Journal of Physics Condensed Matter
Volume	10
Issue number	9
DOIs	https://doi.org/10.1088/0953-8984/10/9/005
State	Published - Mar 9 1998

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title = "Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields",

abstract = "Polaronic effects on the ground state of a donor in GaAs/Al1-xGaxAs and ZnSeXZn1-xCdxSe quantum wells under the influence of an external electric field are investigated for the impurity atom doped at various positions. The confined electron interacts with the interface as well as confined phonon modes that exist in such structures. It is found that such effects in II-VI compounds are in general much more significant than in III-V compounds, reflecting the stronger electron-phonon coupling in more ionic II-VI materials. The ground state energy of the impurity is calculated by means of the Lee, Low and Pines transformation. Contributions from confined and interface phonon modes are considered separately and results calculated for various well widths, field strengths and different impurity positions are presented and discussed.",

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T1 - Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields

AU - Huang, Z. H.

AU - Liang, S. D.

AU - Chen, C. Y.

AU - Lin, D. L.

PY - 1998/3/9

Y1 - 1998/3/9

N2 - Polaronic effects on the ground state of a donor in GaAs/Al1-xGaxAs and ZnSeXZn1-xCdxSe quantum wells under the influence of an external electric field are investigated for the impurity atom doped at various positions. The confined electron interacts with the interface as well as confined phonon modes that exist in such structures. It is found that such effects in II-VI compounds are in general much more significant than in III-V compounds, reflecting the stronger electron-phonon coupling in more ionic II-VI materials. The ground state energy of the impurity is calculated by means of the Lee, Low and Pines transformation. Contributions from confined and interface phonon modes are considered separately and results calculated for various well widths, field strengths and different impurity positions are presented and discussed.

AB - Polaronic effects on the ground state of a donor in GaAs/Al1-xGaxAs and ZnSeXZn1-xCdxSe quantum wells under the influence of an external electric field are investigated for the impurity atom doped at various positions. The confined electron interacts with the interface as well as confined phonon modes that exist in such structures. It is found that such effects in II-VI compounds are in general much more significant than in III-V compounds, reflecting the stronger electron-phonon coupling in more ionic II-VI materials. The ground state energy of the impurity is calculated by means of the Lee, Low and Pines transformation. Contributions from confined and interface phonon modes are considered separately and results calculated for various well widths, field strengths and different impurity positions are presented and discussed.

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DO - 10.1088/0953-8984/10/9/005

M3 - Article

AN - SCOPUS:0038594328

SN - 0953-8984

VL - 10

SP - 1985

EP - 1997

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 9

ER -

Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields

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