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Polarization-Insensitive Metal-Semiconductor-Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors

  • Haifeng Hu
  • , Xie Zeng
  • , Chong Tong
  • , Wayne A. Anderson
  • , Qiaoqiang Gan
  • , Jie Deng
  • , Suhua Jiang
  • SUNY Buffalo
  • IBM
  • Fudan University

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We propose a theoretical design principle of polarization-insensitive metal-semiconductor-metal (MSM) structure for ultraviolet photodetectors based on one-dimensional nanogratings. Because the Fabry-Pérot cavity modes supported by a 100-nm-thick ZnO layer with nanostructures for transverse electric and transverse magnetic polarized incidence overlap with each other, a polarization-insensitive absorption enhancement for the ZnO layer at UV wavelengths is achieved, which can be implemented as a nano-interdigitated electrode to address a long-existing limitation between the speed and the responsivity for conventional MSM photodetectors.

Original languageEnglish
Pages (from-to)239-247
Number of pages9
JournalPlasmonics
Volume8
Issue number2
DOIs
StatePublished - Jun 2013

Keywords

  • Metal-semiconductor-metal structure
  • Nanoplasmonics
  • Ultraviolet detector

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