Plasmon-mediated energy relaxation in graphene

D. K. Ferry; R. Somphonsane; H. Ramamoorthy; J. P. Bird

doi:10.1063/1.4938760

Plasmon-mediated energy relaxation in graphene

D. K. Ferry
, R. Somphonsane
, H. Ramamoorthy
, J. P. Bird

Department of Electrical Engineering

Arizona State University
King Mongkut's Institute of Technology Ladkrabang
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

Original language	English
Article number	262103
Journal	Applied Physics Letters
Volume	107
Issue number	26
DOIs	https://doi.org/10.1063/1.4938760
State	Published - Dec 28 2015

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title = "Plasmon-mediated energy relaxation in graphene",

abstract = "Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.",

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AU - Ramamoorthy, H.

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Y1 - 2015/12/28

N2 - Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

AB - Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

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DO - 10.1063/1.4938760

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JO - Applied Physics Letters

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Plasmon-mediated energy relaxation in graphene

Abstract

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