Plasma treated graphene FET sensor for the DNA hybridization detection

Yaping Xia; Yang Sun; Huamin Li; Shuo Chen; Tiying Zhu; Guangcan Wang; Baoyuan Man; Jie Pan; Cheng Yang

doi:10.1016/j.talanta.2020.121766

Plasma treated graphene FET sensor for the DNA hybridization detection

Yaping Xia
, Yang Sun
, Huamin Li
, Shuo Chen
, Tiying Zhu
, Guangcan Wang
, Baoyuan Man
, Jie Pan
, Cheng Yang

Department of Electrical Engineering

Shandong Normal University
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (C_DNA)/the amount of net drain current (ΔI) and the negative shift in the V_CNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.

Original language	English
Article number	121766
Journal	Talanta
Volume	223
DOIs	https://doi.org/10.1016/j.talanta.2020.121766
State	Published - Feb 1 2021

Keywords

Charge neutral point
CVD graphene
DNA hybridization detection
Field-effect transistors
Plasma treatment

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10.1016/j.talanta.2020.121766

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title = "Plasma treated graphene FET sensor for the DNA hybridization detection",

abstract = "Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (CDNA)/the amount of net drain current (ΔI) and the negative shift in the VCNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.",

keywords = "Charge neutral point, CVD graphene, DNA hybridization detection, Field-effect transistors, Plasma treatment",

author = "Yaping Xia and Yang Sun and Huamin Li and Shuo Chen and Tiying Zhu and Guangcan Wang and Baoyuan Man and Jie Pan and Cheng Yang",

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doi = "10.1016/j.talanta.2020.121766",

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TY - JOUR

T1 - Plasma treated graphene FET sensor for the DNA hybridization detection

AU - Xia, Yaping

AU - Sun, Yang

AU - Li, Huamin

AU - Chen, Shuo

AU - Zhu, Tiying

AU - Wang, Guangcan

AU - Man, Baoyuan

AU - Pan, Jie

AU - Yang, Cheng

PY - 2021/2/1

Y1 - 2021/2/1

N2 - Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (CDNA)/the amount of net drain current (ΔI) and the negative shift in the VCNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.

AB - Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (CDNA)/the amount of net drain current (ΔI) and the negative shift in the VCNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.

KW - Charge neutral point

KW - CVD graphene

KW - DNA hybridization detection

KW - Field-effect transistors

KW - Plasma treatment

UR - https://www.scopus.com/pages/publications/85092907571

U2 - 10.1016/j.talanta.2020.121766

DO - 10.1016/j.talanta.2020.121766

M3 - Article

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SN - 0039-9140

VL - 223

JO - Talanta

JF - Talanta

M1 - 121766

ER -

Plasma treated graphene FET sensor for the DNA hybridization detection

Abstract

Keywords

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