Plasma effects on thin film microstructure

Munir D. Naeem; Stephen M. Rossnagel; Krishna Rajan

doi:10.1557/proc-343-113

Plasma effects on thin film microstructure

Munir D. Naeem
, Stephen M. Rossnagel
, Krishna Rajan

Department of Materials Design and Innovation

Global Foundries, Inc.

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (approximately 50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM). Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

Original language	English
Pages (from-to)	113-118
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	343
DOIs	https://doi.org/10.1557/proc-343-113
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

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@article{d7853cd5457f4b2eadfb05f2ffaf480e,

title = "Plasma effects on thin film microstructure",

abstract = "We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (approximately 50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM). Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.",

author = "Naeem, \{Munir D.\} and Rossnagel, \{Stephen M.\} and Krishna Rajan",

year = "1994",

doi = "10.1557/proc-343-113",

language = "English",

volume = "343",

pages = "113--118",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - JOUR

T1 - Plasma effects on thin film microstructure

AU - Naeem, Munir D.

AU - Rossnagel, Stephen M.

AU - Rajan, Krishna

PY - 1994

Y1 - 1994

N2 - We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (approximately 50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM). Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

AB - We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (approximately 50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM). Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

UR - https://www.scopus.com/pages/publications/0028601230

U2 - 10.1557/proc-343-113

DO - 10.1557/proc-343-113

M3 - Conference article

AN - SCOPUS:0028601230

SN - 0272-9172

VL - 343

SP - 113

EP - 118

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Plasma effects on thin film microstructure

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