Piezoresistance of Uniaxially Deformed n‐Si

Piezoresistance of nondegenerate n‐Si is calculated for the case when the directions of the current and compression axis coincide with the 〈100〉 axis. Low temperatures are considered (T<100 K), when electrons are scattered by acoustic phonons, ionized impurities, and electrons of its own and other valleys. The piezoresistance is shown to depend not only on the impurity concentration but also on the scattering intensity of the electrons of one valley by those of the other valleys. The latter may be determined by comparing the experimental and theoretical deformation resistance dependences under the conditions when the acoustic scattering is inessential due to low temperatures or high doping levels.