Physical model and characteristics of quantum dot infrared photodetectors

V. Ryzhii; I. Khmyrova; V. Pipa; M. Ryzhii; V. Mitin; M. Willander

doi:10.1109/ICIPRM.2001.929138

Physical model and characteristics of quantum dot infrared photodetectors

V. Ryzhii
, I. Khmyrova
, V. Pipa
, M. Ryzhii
, V. Mitin
, M. Willander

Department of Electrical Engineering

The University of Aizu
Wayne State University
Chalmers University of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with the applied voltage and the occurrence of the negative differential photoconductivity.

Original language	English
Pages (from-to)	382-385
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2001.929138
State	Published - 2001

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10.1109/ICIPRM.2001.929138

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title = "Physical model and characteristics of quantum dot infrared photodetectors",

abstract = "We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with the applied voltage and the occurrence of the negative differential photoconductivity.",

author = "V. Ryzhii and I. Khmyrova and V. Pipa and M. Ryzhii and V. Mitin and M. Willander",

year = "2001",

doi = "10.1109/ICIPRM.2001.929138",

language = "English",

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journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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T1 - Physical model and characteristics of quantum dot infrared photodetectors

AU - Ryzhii, V.

AU - Khmyrova, I.

AU - Pipa, V.

AU - Ryzhii, M.

AU - Mitin, V.

AU - Willander, M.

PY - 2001

Y1 - 2001

N2 - We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with the applied voltage and the occurrence of the negative differential photoconductivity.

AB - We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with the applied voltage and the occurrence of the negative differential photoconductivity.

UR - https://www.scopus.com/pages/publications/0034853709

U2 - 10.1109/ICIPRM.2001.929138

DO - 10.1109/ICIPRM.2001.929138

M3 - Article

AN - SCOPUS:0034853709

SN - 1092-8669

SP - 382

EP - 385

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -

Physical model and characteristics of quantum dot infrared photodetectors

Abstract

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